Élimination des hydrures métalliques des déchets gazeux d'un réacteur LP-MOVPE pour la croissance de composés (In, Ga)(As, P) = Elimination of metallic hydrides of gaseous wastes from the LP-MOVPE reactor used for the growth of compounds (In, Ga)(As, P)COVA, P; MASUT, R. A; LACOURSIERE, R et al.Canadian journal of physics (Print). 1993, Vol 71, Num 7-8, pp 307-315, issn 0008-4204Article

Low-temperature pre-treatments in a vertical epitaxial reactor with an improved vacuum load-lock chamberJIE WANG; INOKUCHI, Yasuhiro; KUNII, Yasuo et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S107-S109Conference Paper

Atmospheric pressure chemical vapor deposition of silicon oxide thin films from tetraethyl orthosilicateBAHLAWANE, N.Le Vide (1995). 2000, Vol 54, Num 296, pp 528-533, issn 1266-0167, SUP2-4Conference Paper

On the possibility of physical vapour deposition process design by coordinated substrate rotation modesROTHER, B.Surface & coatings technology. 1994, Vol 64, Num 3, pp 155-159, issn 0257-8972Article

Preparation and ion implantation of solid C₆₀ filmsXIANGJUN FAN; CHANG LIU; TAO YU et al.Surface & coatings technology. 1994, Vol 65, Num 1-3, pp 219-223, issn 0257-8972Conference Paper

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Deposition of aluminium nitride coatings using a cold wall CVD reactorARMAS, B; DE ICAZA HERRERA, M; SIBIEUDE, F et al.Surface & coatings technology. 2000, Vol 123, Num 2-3, pp 199-203, issn 0257-8972Article

Enhancement of reactive sputtering rate of TiO₂ using a planar and dual rotatable cylindrical magnetronsBELKIND, A; WOLFE, J.Thin solid films. 1994, Vol 248, Num 2, pp 163-165, issn 0040-6090Article

A symmetrical magnet magnetron-sputtering method for film depositionQIHUA FAN; YUAN HONG; HONGYOU CHEN et al.Thin solid films. 1993, Vol 229, Num 1, pp 51-53, issn 0040-6090Article

Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materialsWALKER, R; GURARY, A. I; YUAN, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 97-101, issn 0921-5107Conference Paper

Kinetic study of silicon precipitation from SiHCl₃SUGIURA, M; FUWA, A.Nippon Kinzoku Gakkaishi (1952). 1994, Vol 58, Num 4, pp 436-441, issn 0021-4876Article

A new substrate holder for liquid phase epitaxy growth of Hg_1-xCd_xTe from Hg-rich solutionsCHAVADA, F. R; GARG, A. K; SHIV KUMAR et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 36-38, issn 0921-5107Conference Paper

Model of deposition in a horizontal flow-through gas epitaxy reactorKRUPKIN, P. L; TORSTVEIT, S.Soviet physics. Technical physics. 1991, Vol 36, Num 5, pp 502-504, issn 0038-5662Article

Rapid thermal processing with microwave heatingZHANG, S.-L; BUCHTA, R; SIGURD, D et al.Thin solid films. 1994, Vol 246, Num 1-2, pp 151-157, issn 0040-6090Conference Paper

Process stability and morphology optimization of very thick 4H―SiC epitaxial layers grown by chloride-based CVDYAZDANFAR, M; STENBERG, P; BOOKER, I. D et al.Journal of crystal growth. 2013, Vol 380, pp 55-60, issn 0022-0248, 6 p.Article

High quality YBa₂Cu₃O_7-δ film prepared by liquid phase epitaxyNOMURA, K; HOSHI, S; XIN YAO et al.Nippon Kinzoku Gakkaishi (1952). 2000, Vol 64, Num 5, pp 323-326, issn 0021-4876Article

Control of composite profile in mercury cadmium telluride films prepared by isothermal vapor phase epitaxyTAKEUCHI, N; KOBAYASHI, H; NODA, Y et al.Materials transactions - JIM. 1994, Vol 35, Num 5, pp 370-372, issn 0916-1821Article

Control of the uniformity of thickness of Ni thin films deposited by low pressure chemical vapor depositionFAU-CANILLAC, F; MAURY, F.Surface & coatings technology. 1994, Vol 64, Num 1, pp 21-27, issn 0257-8972Article

Formation of nanocrystalline TiN film by ion-beam-enhanced depositionYANG GENQING; WANG DAZHI; LIU XIANGHUAI et al.Surface & coatings technology. 1994, Vol 65, Num 1-3, pp 214-218, issn 0257-8972Conference Paper

Large-sea selective thin film deposition by bias sputteringBERG, S; KATARDJIEV, I. V; NENDER, C et al.Thin solid films. 1994, Vol 241, Num 1-2, pp 1-8, issn 0040-6090Conference Paper

Radical reactions of pyrolysis of triethylarsine and diethylarsineLI, S. H; LARSEN, C. A; STRINGFELLOW, G. B et al.Journal of crystal growth. 1991, Vol 112, Num 2-3, pp 515-524, issn 0022-0248Article

Mass transfer in barrel type epitaxial reactorHANZAWA, T; NOGUCHI, Y; OKUBO, Y et al.Journal of chemical engineering of Japan. 1988, Vol 21, Num 4, pp 339-345, issn 0021-9592Conference Paper

Heat losses in a CVD reactor for polysilicon production: Comprehensive model and experimental validationRAMOS, A; RODRIGUEZ, A; DEL CANIZO, C et al.Journal of crystal growth. 2014, Vol 402, pp 138-146, issn 0022-0248, 9 p.Article

Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD systemZHANG, C; MAN, B. Y; YANG, C et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 39, issn 0957-4484, 395603.1-395603.7Article

Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor depositionNEGISHI, Ryota; HIRANO, Hiroki; OHNO, Yasuhide et al.Thin solid films. 2011, Vol 519, Num 19, pp 6447-6452, issn 0040-6090, 6 p.Article